Consider a GaAs pn junction diode at T=300 K. The parameters of the device are Nd=2x10¹⁶cm⁻³, Na=8x10¹⁵cm⁻³, Dn=210 cm²/s, Dp=8 cm²/s, tno=10⁻⁷s, and tpo=5x10⁻⁸s. Determine the ideal reverse-saturation current density.