The following date are obtained from the Haynes-Shockley experiment on a p-type Si sample at 300 K : length of sample =2 cm, length between injection and collection probes =1.2 cm, applied voltage =10 V,t
d=150μsec, and Δt=39.5μsec. Calculate the mobility and diffusion coefficient of the minority carriers, and check if this data satisfies the Einstein relation. What should be the minimum values of the lifetime and the diffusion length in the original sample for authentic measurement results?