A Si p-n junction is reverse-biased with Va = −10 V. Determine the percent change in junction (depletion) capacitance and built-in potential if the doping in the p region is increased by a factor of 2 . Assume A Si p-n junction has dopant concentrations ND = 2×10¹⁵cm−³ and NA=2×10¹⁶cm−³.