Example 1
An abrupt silicon pn junction has the doping densities of NA=10^15 atoms/cm^3 and ND= 10^16 atoms/cm^3 . Calculate the junction built-in potential, the depletion-layer widths, the maximum field and the depletion capacitance with 10 V reverse bias if Cj0=3pF.
At room temperature, kT/q=26mV and the intrinsic concentration is ni=1.5×10^10 cm^−3.