(Evaluation of physical parameters, 10 pt*5)
(a) Evaluate the In composition of InGaAs whose lattice constant matches lnP.
(b) Estimate the band edge absorption wavelength of lnn₀.₂Ga₀.₈N. Please consider bandgap bowing parameter of InGaN, which b=−1.21eV.
(c) Evaluate the bandgap of Al₀.₈Ga₀.₂As, and specify the type of bandgap.
(d) Consider a nano-porous GaN, where the air ratio is 30%. Assume the relative dielectric constant of GaN is 6(εr,GaN=6), and that of air is 1(εr, air=1). Estimate the refractive index by direct interpolation of dielectric constant.
(e) Calculate the total polarization of ln₀.₁Ga₀.₉N strained on the GaN substrate on (001) plane. For convenience, let's assume the Psp, Cij, and eij of GaN and lnGaN is the same.